[B-1-4] Impact of Si Oxidation States on Dipole Layer at HfO₂/Si Interface

N. Miyata^1,2、Y. Abe²、T. Yasuda¹ (1.AIST(Japan)、2.Musashi Inst. Of Tech.(Japan))

https://doi.org/10.7567/SSDM.2009.B-1-4