The Japan Society of Applied Physics

[B-2-6L] In Situ Si Wafer Surface Temperature Measurement during Flash Lamp Annealing

Y. Yamada1、T. Aoyama2、H. Chino3、K. Hiraka3、J. Ishii1、S. Kadoya3、S. Kato2、H. Kiyama4、H. Kondo4、T. Kuroiwa4、K. Matsuo4、T. Owada5、T. Shimizu3、T. Yokomori5 (1.AIST(Japan)、2.Semiconductor Leading Edge Tech. Inc.(Japan)、3.Chino Corp.(Japan)、4.Dainippon Screen Manufac. Co. Ltd.(Japan)、5.Ushio Inc.(Japan))

https://doi.org/10.7567/SSDM.2009.B-2-6L