[B-2-6L] In Situ Si Wafer Surface Temperature Measurement during Flash Lamp Annealing

Y. Yamada¹、T. Aoyama²、H. Chino³、K. Hiraka³、J. Ishii¹、S. Kadoya³、S. Kato²、H. Kiyama⁴、H. Kondo⁴、T. Kuroiwa⁴、K. Matsuo⁴、T. Owada⁵、T. Shimizu³、T. Yokomori⁵ (1.AIST(Japan)、2.Semiconductor Leading Edge Tech. Inc.(Japan)、3.Chino Corp.(Japan)、4.Dainippon Screen Manufac. Co. Ltd.(Japan)、5.Ushio Inc.(Japan))

https://doi.org/10.7567/SSDM.2009.B-2-6L