[B-5-3] Improvement of Interfacial Characteristics and Reliability in Poly/SiON Gate Stack by Catalytic Effect of Hafnium Incorporation Technique
T. Shimizu1, Y. Arayashiki1, S. Inumiya1, K. Nakajima1, T. Aoyama1, K. Eguchi1
(1.Toshiba Corp.)
https://doi.org/10.7567/SSDM.2009.B-5-3
