[B-7-3] Diffusion control of n-type impurities in Ge using co-doping technique for ultra-shallow and highly doped n⁺/p junction in Ge nMOSFETs

M. Koike¹、K. Tatsumura² (1.MIRAI-Toshiba(Japan)、2.Toshiba Corp.(Japan))

https://doi.org/10.7567/SSDM.2009.B-7-3