[B-8-5] Activation of B and As in Ultra Shallow Junction with Heating and Cooling Rates Controlled Millisecond Annealing Induced by Thermal Plasma Jet

K. Matsumoto¹、S. Higashi¹、H. Furukawa¹、T. Okada¹、H. Murakami¹、S. Miyazaki¹ (1.Hiroshima Univ.)

https://doi.org/10.7567/SSDM.2009.B-8-5