[B-9-2] Decoupling method of BTI component from hot carrier degradation in ultra-thin HfSiON MOSFETs

A. Masada¹、I. Hirano¹、S. Fukatsu¹、Y. Mitani¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.B-9-2