[B-9-2] Decoupling method of BTI component from hot carrier degradation in ultra-thin HfSiON MOSFETs

A. Masada¹, I. Hirano¹, S. Fukatsu¹, Y. Mitani¹ (1.Toshiba Corp.)

https://doi.org/10.7567/SSDM.2009.B-9-2