Novel Single Metal Gate CMOS Integration with Effective Workfunction Modulation by a Differential Spacer: Manipulation of Oxygen Vacancy

Y. H. Kim; K. Schonenberg; T. Ando; D. Neumayer; R. Mo; H. Bu; J. Sleight; E. Cartier; N. Moumen; R. Jha; W. Yan; Y. Liang; V. Narayanan; M. P. Chudzik; S. Guha

doi:https://doi.org/10.7567/SSDM.2009.C-6-3

[C-6-3] Novel Single Metal Gate CMOS Integration with Effective Workfunction Modulation by a Differential Spacer: Manipulation of Oxygen Vacancy

Y. H. Kim¹, K. Schonenberg¹, T. Ando¹, D. Neumayer¹, R. Mo¹, H. Bu¹, J. Sleight¹, E. Cartier¹, N. Moumen¹, R. Jha¹, W. Yan¹, Y. Liang¹, V. Narayanan¹, M. P. Chudzik¹, S. Guha¹ (1.IBM)

https://doi.org/10.7567/SSDM.2009.C-6-3

2009 International Conference on Solid State Devices and Materials

[C-6-3] Novel Single Metal Gate CMOS Integration with Effective Workfunction Modulation by a Differential Spacer: Manipulation of Oxygen Vacancy