[C-8-3] Inversion-Layer Mobility Limited by Coulomb Scattering on Si (100), (110) and (111) n-MOSFETs

Y. Nakabayashi¹、T. Ishihara¹、T. Numata¹、K. Uchida²、S. Takagi³ (1.Toshiba Corp.(Japan)、2.Tokyo Tech(Japan)、3.Univ. of Tokyo(Japan))

https://doi.org/10.7567/SSDM.2009.C-8-3