[C-8-4] Experimental Study on Hall Factor in Ultrathin-Body SOI n-MOSFETs

S. Kobayashi¹、M. Saitoh¹、Y. Nakabayashi¹、T. Ishihara¹、T. Numata¹、K. Uchida² (1.Toshiba Corp.(Japan)、2.Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2009.C-8-4