Rutherford Backscattering Spectrometry Analysis of Growth of Ti-Rich Layer Formed at Cu(Ti)/Low-k Interfaces

K. Kohama; K. Ito; K. Mori; K. Maekawa; Y. Shirai; M. Murakami

doi:https://doi.org/10.7567/SSDM.2009.D-5-2

[D-5-2] Rutherford Backscattering Spectrometry Analysis of Growth of Ti-Rich Layer Formed at Cu(Ti)/Low-k Interfaces

K. Kohama¹, K. Ito¹, K. Mori², K. Maekawa², Y. Shirai¹, M. Murakami³ (1.Kyoto Univ.(Japan), 2.Renesas Tech. Corp.(Japan), 3.The Ritsumeikan Trust(Japan))

https://doi.org/10.7567/SSDM.2009.D-5-2

2009 International Conference on Solid State Devices and Materials

[D-5-2] Rutherford Backscattering Spectrometry Analysis of Growth of Ti-Rich Layer Formed at Cu(Ti)/Low-k Interfaces