[E-4-3L] High Voltage AlGaN/GaN HEMTs Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer

Y. H. Choi¹, S. J. Kim¹, Y. S. Kim¹, M. K. Kim¹, O. Seok¹, M. K. Han¹ (1.Seoul National Univ.)

https://doi.org/10.7567/SSDM.2009.E-4-3L