[E-4-3L] High Voltage AlGaN/GaN HEMTs Employing Surface Treatment by Deposition and Removal of Silicon Dioxide Layer

Y. H. Choi¹、S. J. Kim¹、Y. S. Kim¹、M. K. Kim¹、O. Seok¹、M. K. Han¹ (1.Seoul National Univ.)

https://doi.org/10.7567/SSDM.2009.E-4-3L