[E-5-3L] Multilayer Epitaxial Lateral Overgrowth of Light Emitting Diode with Anisotropi-cally Etched GaN/sapphire Interface.

M. H. Lo¹、P. M. Tu¹、C. H. Wang¹、H. C. Kuo¹、S. C. Wang¹、H. W. Zan¹、C. Y. Chang¹、S. C. Hsu²、Y. J. Cheng²、S. C. Huang³ (1.National chiao Tung Univ.(Taiwan)、2.Res. Center for Applied Sci., Academia Sinica(Taiwan)、3.Advanced Optoelectronic Technology Inc.(Taiwan))

https://doi.org/10.7567/SSDM.2009.E-5-3L