[E-5-3L] Multilayer Epitaxial Lateral Overgrowth of Light Emitting Diode with Anisotropi-cally Etched GaN/sapphire Interface.

M. H. Lo¹, P. M. Tu¹, C. H. Wang¹, H. C. Kuo¹, S. C. Wang¹, H. W. Zan¹, C. Y. Chang¹, S. C. Hsu², Y. J. Cheng², S. C. Huang³ (1.National chiao Tung Univ.(Taiwan), 2.Res. Center for Applied Sci., Academia Sinica(Taiwan), 3.Advanced Optoelectronic Technology Inc.(Taiwan))

https://doi.org/10.7567/SSDM.2009.E-5-3L