The Japan Society of Applied Physics

[E-5-3L] Multilayer Epitaxial Lateral Overgrowth of Light Emitting Diode with Anisotropi-cally Etched GaN/sapphire Interface.

M. H. Lo1, P. M. Tu1, C. H. Wang1, H. C. Kuo1, S. C. Wang1, H. W. Zan1, C. Y. Chang1, S. C. Hsu2, Y. J. Cheng2, S. C. Huang3 (1.National chiao Tung Univ.(Taiwan), 2.Res. Center for Applied Sci., Academia Sinica(Taiwan), 3.Advanced Optoelectronic Technology Inc.(Taiwan))

https://doi.org/10.7567/SSDM.2009.E-5-3L