[E-7-2] Series Resistance Behavior Extracted from Silicon Nanowire Transistors using the Y-function Technique

R. H. Baek¹、C. K. Baek²、S. W. Jung³、Y. Y. Yeoh⁴、D. W. Kim⁴、J. S. Lee^1,3、D. M. Kim²、Y. H. Jeong^1,3 (1.POSTECH(Korea)、2.KIAS(Korea)、3.NCNT(Korea)、4.Samsung Electronics Corp.(Korea))

https://doi.org/10.7567/SSDM.2009.E-7-2