[E-7-2] Series Resistance Behavior Extracted from Silicon Nanowire Transistors using the Y-function Technique

R. H. Baek¹, C. K. Baek², S. W. Jung³, Y. Y. Yeoh⁴, D. W. Kim⁴, J. S. Lee^1,3, D. M. Kim², Y. H. Jeong^1,3 (1.POSTECH(Korea), 2.KIAS(Korea), 3.NCNT(Korea), 4.Samsung Electronics Corp.(Korea))

https://doi.org/10.7567/SSDM.2009.E-7-2