[F-1-6] Development of FET Type Photorewritable Memory using Photochromic Interface Layer

M. Yoshida¹, K. Suemori¹, S. Uemura¹, S. Hoshino¹, N. Takada¹, T. Kodzasa¹, T. Kamata¹ (1.AIST)

https://doi.org/10.7567/SSDM.2009.F-1-6