[F-1-6] Development of FET Type Photorewritable Memory using Photochromic Interface Layer

M. Yoshida¹、K. Suemori¹、S. Uemura¹、S. Hoshino¹、N. Takada¹、T. Kodzasa¹、T. Kamata¹ (1.AIST)

https://doi.org/10.7567/SSDM.2009.F-1-6