[G-8-2] Chemical and Electronic Properties of ALD-Al₂O₃/AlGaN Interfaces

Y. Hori¹、C. Mizue¹、K. Ooyama¹、M. Miczek²、T. Hashizume¹ (1.Hokkaido Univ.(Japan)、2.Silesian Univ. of Tech.(Poland))

https://doi.org/10.7567/SSDM.2009.G-8-2