[G-8-3] Metal-Gate/High-Permittivity Dielectric Stack on Gallium Nitride formed by Silane Surface Passivation and Metal-Organic Chemical Vapor Deposition

X. Liu¹、H. C. Chin¹、L. S. Tan¹、Y. C. Yeo¹ (1.National Univ. of Singapore)

https://doi.org/10.7567/SSDM.2009.G-8-3