Performance Evaluation of Graphene Nanoribbon Tunneling Field Effect Transistors

K. T. Lam; S. B. Kumar; S. K. Chin; D. W. Seah; G. Liang

doi:https://doi.org/10.7567/SSDM.2009.G-9-4

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜 2009年10月9日
Sendai Kokusai Hotel, Miyagi, Japan

[G-9-4] Performance Evaluation of Graphene Nanoribbon Tunneling Field Effect Transistors

K. T. Lam¹、S. B. Kumar¹、S. K. Chin²、D. W. Seah¹、G. Liang^1,2 (1.National Univ. of Singapore(Singapore)、2.Inst. of High Performance Computing(Singapore))

https://doi.org/10.7567/SSDM.2009.G-9-4

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