[H-1-1] Epitaxial growth and defect generation in in-situ doped high percentage SiGe

A. Reznicek¹、T. N. Adam¹、Z. Zhu¹、K. E. Fogel¹、J. Li¹、L. Tai¹、P. Kulkami¹、J. Kim¹、S. W. Bedell¹、D. K. Sadana¹ (1.IBM)

https://doi.org/10.7567/SSDM.2009.H-1-1