[H-1-1] Epitaxial growth and defect generation in in-situ doped high percentage SiGe
A. Reznicek1, T. N. Adam1, Z. Zhu1, K. E. Fogel1, J. Li1, L. Tai1, P. Kulkami1, J. Kim1, S. W. Bedell1, D. K. Sadana1
(1.IBM)
https://doi.org/10.7567/SSDM.2009.H-1-1
