[H-1-2] Study on SiGe Film Properties Fabricated using a Reactive Thermal CVD Method

M. Wakagi¹, I. Suzumura¹, H. Asanuma¹, E. Nishimura¹, M. Matsumura¹, A. Kagatsume¹, J. Hanna² (1.Hitachi, Ltd.(Japan), 2.Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2009.H-1-2