[H-1-2] Study on SiGe Film Properties Fabricated using a Reactive Thermal CVD Method

M. Wakagi¹、I. Suzumura¹、H. Asanuma¹、E. Nishimura¹、M. Matsumura¹、A. Kagatsume¹、J. Hanna² (1.Hitachi, Ltd.(Japan)、2.Tokyo Tech(Japan))

https://doi.org/10.7567/SSDM.2009.H-1-2