[H-1-3] Compressively strained Ge channel heterostructures grown by RP-CVD for the next generation CMOS Devices

M. Myronov¹, V. A. Shah¹, A. Dobbie¹, X. C. Liu¹, V. H. Nguyen¹, D. R. Leadley¹ (1.Univ, of Warwick)

https://doi.org/10.7567/SSDM.2009.H-1-3