[H-1-3] Compressively strained Ge channel heterostructures grown by RP-CVD for the next generation CMOS Devices

M. Myronov¹、V. A. Shah¹、A. Dobbie¹、X. C. Liu¹、V. H. Nguyen¹、D. R. Leadley¹ (1.Univ, of Warwick)

https://doi.org/10.7567/SSDM.2009.H-1-3