Low Temperature (375℃) Metal Induced Lateral Crystallization (MILC) of Si<sub>1-x</sub>Ge<sub>x</sub> (0≤x≤1) using Silicide/Germanide Forming Metals (Ni, Pd and Co)

T. H. Phung; R. Xie; S. Tripathy; M. Yu; C. Zhu

doi:https://doi.org/10.7567/SSDM.2009.H-1-5

[H-1-5] Low Temperature (375℃) Metal Induced Lateral Crystallization (MILC) of Si_1-xGe_x (0≤x≤1) using Silicide/Germanide Forming Metals (Ni, Pd and Co)

T. H. Phung¹、R. Xie^1,2、S. Tripathy³、M. Yu²、C. Zhu¹ (1.National Univ. of Singapore(Singapore)、2.Inst. of Microelectronics(Singapore)、3.Inst. Of Materials Res. And Eng.(Singapore))

https://doi.org/10.7567/SSDM.2009.H-1-5

2009 International Conference on Solid State Devices and Materials

[H-1-5] Low Temperature (375℃) Metal Induced Lateral Crystallization (MILC) of Si1-xGex (0≤x≤1) using Silicide/Germanide Forming Metals (Ni, Pd and Co)

[H-1-5] Low Temperature (375℃) Metal Induced Lateral Crystallization (MILC) of Si_1-xGe_x (0≤x≤1) using Silicide/Germanide Forming Metals (Ni, Pd and Co)