[H-1-9] Growth and Characterization of InGaAs Nanowires formed on GaAs(111)B by Selective-Area Metal Organic Vapor Phase Epitaxy

M. Yoshimura¹, K. Tomioka¹, K. Hiruma¹, S. Hara¹, J. Motohisa¹, T. Fukui¹ (1.Hokkaido Univ.)

https://doi.org/10.7567/SSDM.2009.H-1-9