Growth and Electronic Structure of Epitaxial Graphene on Silicon Carbide

A. Bostwick; E. Rotenberg; J. McChesney; T. Ohta; T. Seyller; K. Horn

doi:https://doi.org/10.7567/SSDM.2009.H-2-2

2009 International Conference on Solid State Devices and Materials

Oct 6, 2009 - Oct 9, 2009
Sendai Kokusai Hotel, Miyagi, Japan

[H-2-2] Growth and Electronic Structure of Epitaxial Graphene on Silicon Carbide

A. Bostwick¹, E. Rotenberg¹, J. McChesney^1,2, T. Ohta^1,2, T. Seyller³, K. Horn² (1.ALS. Lawrence Berkeley Lab.(USA), 2.Fritz Haber Inst.(Germany), 3.Univ. Erlangen(Germany))

https://doi.org/10.7567/SSDM.2009.H-2-2

▲