Growth and Electronic Structure of Epitaxial Graphene on Silicon Carbide

A. Bostwick; E. Rotenberg; J. McChesney; T. Ohta; T. Seyller; K. Horn

doi:https://doi.org/10.7567/SSDM.2009.H-2-2

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜 2009年10月9日
Sendai Kokusai Hotel, Miyagi, Japan

[H-2-2] Growth and Electronic Structure of Epitaxial Graphene on Silicon Carbide

A. Bostwick¹、E. Rotenberg¹、J. McChesney^1,2、T. Ohta^1,2、T. Seyller³、K. Horn² (1.ALS. Lawrence Berkeley Lab.(USA)、2.Fritz Haber Inst.(Germany)、3.Univ. Erlangen(Germany))

https://doi.org/10.7567/SSDM.2009.H-2-2

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