Effect of Carrier Gas (Ar and He) on the Crystallographic Quality of Multi-layer Graphene Grown on Si by Photoemission-assisted Plasma CVD

H. Sumi; S. Ogawa; A. Saikubo; E. Ikenaga; M. Nihei; Y. Takakuwa

doi:https://doi.org/10.7567/SSDM.2009.H-2-4

[H-2-4] Effect of Carrier Gas (Ar and He) on the Crystallographic Quality of Multi-layer Graphene Grown on Si by Photoemission-assisted Plasma CVD

H. Sumi¹、S. Ogawa^1,2、A. Saikubo^2,3、E. Ikenaga^2,3、M. Nihei^2,4、Y. Takakuwa^1,2 (1.Tohoku Univ.(Japan)、2.CREST-JST(Japan)、3.JASRI/SPring-8(Japan)、4.Fujitsu Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.H-2-4

2009 International Conference on Solid State Devices and Materials

[H-2-4] Effect of Carrier Gas (Ar and He) on the Crystallographic Quality of Multi-layer Graphene Grown on Si by Photoemission-assisted Plasma CVD