[H-2-6L] Epitaxy of Graphene on Si substrates toward Three-Dimensional Graphene Devices

H. Fukidome¹、Y. Miyamoto¹、H. Handa^1,2、R. Takahashi¹、K. Imaizumi¹、M. Suemitsu^1,2 (1.Tohoku Univ.(Japan)、2.CREST-JST(Japan))

https://doi.org/10.7567/SSDM.2009.H-2-6L