[H-2-6L] Epitaxy of Graphene on Si substrates toward Three-Dimensional Graphene Devices

H. Fukidome¹, Y. Miyamoto¹, H. Handa^1,2, R. Takahashi¹, K. Imaizumi¹, M. Suemitsu^1,2 (1.Tohoku Univ.(Japan), 2.CREST-JST(Japan))

https://doi.org/10.7567/SSDM.2009.H-2-6L