The Japan Society of Applied Physics

[H-2-6L] Epitaxy of Graphene on Si substrates toward Three-Dimensional Graphene Devices

H. Fukidome1, Y. Miyamoto1, H. Handa1,2, R. Takahashi1, K. Imaizumi1, M. Suemitsu1,2 (1.Tohoku Univ.(Japan), 2.CREST-JST(Japan))

https://doi.org/10.7567/SSDM.2009.H-2-6L