Prediction of Crystallization Temperature for HfO<sub>2</sub> Thin Film in High Temperature Annealing Process by Reaction Time Accelerating Molecular Dynamics

K. Nishitani; H. Yabuhara; A. Endou; A. Suzuki; H. Tsuboi; N. Hatakeyama; H. Takaba; M. Kubo; A. Miyamoto

doi:https://doi.org/10.7567/SSDM.2009.H-3-3

[H-3-3] Prediction of Crystallization Temperature for HfO₂ Thin Film in High Temperature Annealing Process by Reaction Time Accelerating Molecular Dynamics

K. Nishitani^1,2、H. Yabuhara¹、A. Endou²、A. Suzuki²、H. Tsuboi²、N. Hatakeyama²、H. Takaba²、M. Kubo²、A. Miyamoto² (1.Toshiba Corp.(Japan)、2.Tohoku Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.H-3-3

2009 International Conference on Solid State Devices and Materials

[H-3-3] Prediction of Crystallization Temperature for HfO2 Thin Film in High Temperature Annealing Process by Reaction Time Accelerating Molecular Dynamics

[H-3-3] Prediction of Crystallization Temperature for HfO₂ Thin Film in High Temperature Annealing Process by Reaction Time Accelerating Molecular Dynamics