Prediction of Crystallization Temperature for HfO<sub>2</sub> Thin Film in High Temperature Annealing Process by Reaction Time Accelerating Molecular Dynamics

K. Nishitani; H. Yabuhara; A. Endou; A. Suzuki; H. Tsuboi; N. Hatakeyama; H. Takaba; M. Kubo; A. Miyamoto

doi:https://doi.org/10.7567/SSDM.2009.H-3-3

[H-3-3] Prediction of Crystallization Temperature for HfO₂ Thin Film in High Temperature Annealing Process by Reaction Time Accelerating Molecular Dynamics

K. Nishitani^1,2, H. Yabuhara¹, A. Endou², A. Suzuki², H. Tsuboi², N. Hatakeyama², H. Takaba², M. Kubo², A. Miyamoto² (1.Toshiba Corp.(Japan), 2.Tohoku Univ.(Japan))

https://doi.org/10.7567/SSDM.2009.H-3-3

2009 International Conference on Solid State Devices and Materials

[H-3-3] Prediction of Crystallization Temperature for HfO2 Thin Film in High Temperature Annealing Process by Reaction Time Accelerating Molecular Dynamics

[H-3-3] Prediction of Crystallization Temperature for HfO₂ Thin Film in High Temperature Annealing Process by Reaction Time Accelerating Molecular Dynamics