Electrical and Physical Characteristics of the High-K Gd<sub>2</sub>O<sub>3</sub> (Gadolinium) Dielectric Deposited on the Polycrystalline Silicon

J. S. Chiu; C. H. Kao; H. Chen; P. Y. Tsung; Y. C. Liao; W. S. Liao; Y. T. Chung; H. C. Fan; P. L. Lai; C. Y. Huang; C. S. Lin; J. M. Dai

doi:https://doi.org/10.7567/SSDM.2009.H-3-4

[H-3-4] Electrical and Physical Characteristics of the High-K Gd₂O₃ (Gadolinium) Dielectric Deposited on the Polycrystalline Silicon

J. S. Chiu¹、C. H. Kao¹、H. Chen²、P. Y. Tsung¹、Y. C. Liao¹、W. S. Liao¹、Y. T. Chung¹、H. C. Fan¹、P. L. Lai¹、C. Y. Huang¹、C. S. Lin¹、J. M. Dai¹ (1.Chang Gung Univ.(Taiwan)、2.Chi Nan Univ.(Taiwan))

https://doi.org/10.7567/SSDM.2009.H-3-4

2009 International Conference on Solid State Devices and Materials

[H-3-4] Electrical and Physical Characteristics of the High-K Gd2O3 (Gadolinium) Dielectric Deposited on the Polycrystalline Silicon

[H-3-4] Electrical and Physical Characteristics of the High-K Gd₂O₃ (Gadolinium) Dielectric Deposited on the Polycrystalline Silicon