[H-4-3] Growth of (10τ3) semipolar GaN on Si substrate with a CrN interlayer by molecular beam epitaxy

K. W. Liu¹、T. H. Hsueh¹、S. J. Young¹、H. Hung¹、S. X. Chen¹、Y. Z. Chen¹、S. J. Chang¹ (1.Nation Cheng Kung Univ.)

https://doi.org/10.7567/SSDM.2009.H-4-3