The Japan Society of Applied Physics

[H-5-2] Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique

H. Song1,2, J. S. Kim1, E. K. Kim1, Y. G. Seo2, S. M. Hwang2 (1.Hanyang Univ.(Korea), 2.Korea Electronics Tech. Inst.(Korea))

https://doi.org/10.7567/SSDM.2009.H-5-2