[H-5-2] Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique

H. Song^1,2、J. S. Kim¹、E. K. Kim¹、Y. G. Seo²、S. M. Hwang² (1.Hanyang Univ.(Korea)、2.Korea Electronics Tech. Inst.(Korea))

https://doi.org/10.7567/SSDM.2009.H-5-2