[H-5-2] Growth and Characterization of High Quality a-plane InGaN/GaN Single Quantum Well Structure Grown by Multi-buffer Layer Technique
H. Song1,2、J. S. Kim1、E. K. Kim1、Y. G. Seo2、S. M. Hwang2
(1.Hanyang Univ.(Korea)、2.Korea Electronics Tech. Inst.(Korea))
https://doi.org/10.7567/SSDM.2009.H-5-2