[I-1-5] The Approach to Dislocation-free Ge Mesa on Si Fabricated by Dry Etching

Y. Takada¹, J. Osaka¹, Y. Ishikawa¹, K. Wada¹ (1.Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2009.I-1-5