[I-1-5] The Approach to Dislocation-free Ge Mesa on Si Fabricated by Dry Etching

Y. Takada¹、J. Osaka¹、Y. Ishikawa¹、K. Wada¹ (1.Univ. of Tokyo)

https://doi.org/10.7567/SSDM.2009.I-1-5