[I-3-5] Fabrication of High Qualify factor of GaN-based Vertical-cavity Light Emitting Diodes with AlN/GaN and Ta₂O₅/SiO₂ Hybrid Mirrors

S. W. Chen¹、C. K. Chen¹、T. T. Kao¹、C. H. Chen¹、M. H. Lo¹、Z. Y. Li¹、T. C. Lu¹、H. C. Kuo¹、S. C. Wang¹ (1.National Chiao Tung Univ.)

https://doi.org/10.7567/SSDM.2009.I-3-5