[I-3-5] Fabrication of High Qualify factor of GaN-based Vertical-cavity Light Emitting Diodes with AlN/GaN and Ta₂O₅/SiO₂ Hybrid Mirrors

S. W. Chen¹, C. K. Chen¹, T. T. Kao¹, C. H. Chen¹, M. H. Lo¹, Z. Y. Li¹, T. C. Lu¹, H. C. Kuo¹, S. C. Wang¹ (1.National Chiao Tung Univ.)

https://doi.org/10.7567/SSDM.2009.I-3-5