[I-8-2] Enhanced Luminescence Efficiency of InGaN/GaN Multiple Quantum Wells by A Strain Relief Layer and Proper Si Doping

P. C. Tsai¹、Y. K. Su¹、C. Y. Huang¹ (1.National Cheng Kung Univ.)

https://doi.org/10.7567/SSDM.2009.I-8-2