Light-emitting Diode based on ZnO by Plasma Enhanced MOCVD Employing Microwave Exited Plasma

H. Asahara; D. Takamizu; A. Inokuchi; M. Hirayama; A. Teramoto; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2009.I-8-7

[I-8-7] Light-emitting Diode based on ZnO by Plasma Enhanced MOCVD Employing Microwave Exited Plasma

H. Asahara^1,2, D. Takamizu², A. Inokuchi^1,3, M. Hirayama¹, A. Teramoto¹, T. Ohmi¹ (1.Tohoku Univ.(Japan), 2.ROHM Co., Ltd.(Japan), 3.Tokyo Electron Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.I-8-7

2009 International Conference on Solid State Devices and Materials

[I-8-7] Light-emitting Diode based on ZnO by Plasma Enhanced MOCVD Employing Microwave Exited Plasma