Light-emitting Diode based on ZnO by Plasma Enhanced MOCVD Employing Microwave Exited Plasma

H. Asahara; D. Takamizu; A. Inokuchi; M. Hirayama; A. Teramoto; T. Ohmi

doi:https://doi.org/10.7567/SSDM.2009.I-8-7

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜 2009年10月9日
Sendai Kokusai Hotel, Miyagi, Japan

[I-8-7] Light-emitting Diode based on ZnO by Plasma Enhanced MOCVD Employing Microwave Exited Plasma

H. Asahara^1,2、D. Takamizu²、A. Inokuchi^1,3、M. Hirayama¹、A. Teramoto¹、T. Ohmi¹ (1.Tohoku Univ.(Japan)、2.ROHM Co., Ltd.(Japan)、3.Tokyo Electron Ltd.(Japan))

https://doi.org/10.7567/SSDM.2009.I-8-7

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