[J-1-2] Compressively Strained-In_xAl_1-xN/Al_0.22Ga_0.78N/GaN (x = 0.245-0.325) Heterostrucures FETs with a Regrown AlGaN Contact Layer

M. Hiroki¹、N. Maeda¹、N. Shigekawa¹ (1.NTT Corp.)

https://doi.org/10.7567/SSDM.2009.J-1-2